Cite
HARVARD Citation
Ngo, T. et al. (2022). Anomalously persistent p-type behavior of WSe2 field-effect transistors by oxidized edge-induced Fermi-level pinning. Journal of materials chemistry. 10 (3), pp. 846-853. [Online].
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Ngo, T. et al. (2022). Anomalously persistent p-type behavior of WSe2 field-effect transistors by oxidized edge-induced Fermi-level pinning. Journal of materials chemistry. 10 (3), pp. 846-853. [Online].