Insight into the stacking and the species-ordering dependences of interlayer bonding in SiC/GeC polar heterostructures. (19th January 2022)

• Record Type: Journal Article
• Authors: Tasnim, Kazi Jannatul; Alharbi, Safia Abdullah R; Musa, Md Rajib Khan; Lovell, Simon Hosch; Akridge, Zachary Alexander; Yu, Ming
• Is Part Of: Nanotechnology. Volume 33:Number 15(2022)
• Publication Date: 2022-01-19
• Subjects: two-dimensional heterostructure -- stacking and species-ordering -- electrostatic interlayer bonding -- van der Waals interaction -- orbital hybridization -- charge redistribution -- tunable band gap; Nanotechnology -- Periodicals; Nanotechnology -- Periodicals; Nanotechnology; Publications périodiques; Nanotechnologies; Periodicals; 620.5
• DOI: 10.1088/1361-6528/ac475b
• Languages: English
• ISSNs: 0957-4484

Abstract

Abstract: Two-dimensional (2D) polar materials experience an in-plane charge transfer between different elements due to their electron negativities. When they form vertical heterostructures, the electrostatic force triggered by such charge transfer plays an important role in the interlayer bonding beyond van der Waals (vdW) interaction. Our comprehensive first principle study on the structural stability of the 2D SiC/GeC hybrid bilayer heterostructure has found that the electrostatic interlayer interaction can induce the π – π orbital hybridization between adjacent layers under different stacking and out-of-plane species ordering, with strong hybridization in the cases of Si–C and C–Ge species orderings but weak hybridization in the case of the C–C ordering. In particular, the attractive electrostatic interlayer interaction in the cases of Si–C and C–Ge species orderings mainly controls the equilibrium interlayer distance and the vdW interaction makes the system attain a lower binding energy. On the contrary, the vdW interaction mostly controls the equilibrium interlayer distance in the case of the C–C species ordering and the repulsive electrostatic interlayer force has less effect. Interesting finding is that the band structure of the SiC/GeC hybrid bilayer is sensitive to the layer-layer stacking and the out-of-plane species ordering. An indirect band gap of 2.76 eV (or 2.48 eV) was found under the AA stacking with Si–C ordering (or under the AB stacking with C–C ordering). While a direct band gap of 2.00–2.88 eV was found under other stacking and species orderings, demonstrating its band gap tunable feature. Furthermore, there is a charge redistribution in the interfacial region leading to a built-in electric field. Such field will separate the photo-generated charge carriers in different layers and is expected to reduce the probability of carrier recombination, and eventually give rise to the electron tunneling between layers.