Room temperature fabrication and post-annealing treatment of amorphous Ga2O3 photodetectors for deep-ultraviolet light detection. (21st January 2022)

• Record Type: Journal Article
• Authors: Zhang, Tan; Guan, Denggao; Liu, Ningtao; Zhang, Jianguo; Zhang, Jinfu; Guo, Chenyu; Qiu, Mengting; Yuan, Qilong; Zhang, Wenrui; Ye, Jichun
• Is Part Of: Applied physics express. Volume 15:Number 2(2022)
• Publication Date: 2022-01-21
• Subjects: deep-ultraviolet photodetector -- gallium oxide -- oxygen vacancy -- sputtering -- post-annealing; Physics -- Periodicals; Technology -- Periodicals; 621.05
• DOI: 10.35848/1882-0786/ac48d9
• Languages: English
• ISSNs: 1882-0778

Abstract

Abstract: This work fabricates deep-ultraviolet (DUV) photodetectors (PDs) with a metal-semiconductor-metal structure based on radio-frequency sputtered amorphous Ga2 O3 films at room temperature. The Ga2 O3 -based PD exhibits a low dark current of 1.41 × 10 −11 A, a responsivity of 1.77 A W −1 and a fast rise response time of 114 ms. A series of annealing treatments with different atmospheres have been found effective to reduce the oxygen vacancy concentration, exhibiting a trade-off effect between the responsivity and the response time. These results demonstrate a cost-effective room-temperature approach for fabricating amorphous Ga2 O3 -based PDs and developing possible post-synthetic methods for tuning the PD performance.