Comprehensive study on unipolar RRAM charge conduction and stochastic features: a simulation approach. (20th January 2022)

• Record Type: Journal Article
• Authors: Maldonado, D; Gómez-Campos, F M; González, M B; Roldán, A M; Jiménez-Molinos, F; Campabadal, F; Roldán, J B
• Is Part Of: Journal of physics. Volume 55:Number 15(2022)
• Publication Date: 2022-01-20
• Subjects: resistive switching memory -- RRAM -- circuit breakers -- simulation -- variability -- modeling -- variability; Physics -- Periodicals; 530
• DOI: 10.1088/1361-6463/ac472c
• Languages: English
• ISSNs: 0022-3727

Abstract

Abstract: An in-depth analysis of resistive switching (RS) in unipolar devices is performed by means of a new simulator based on resistive circuit breakers of different features. The forming, set and reset processes are described in terms of the stochastic formation and rupture of conductive filaments (CFs) of several branches in the dielectric. Both, the electric field and temperature dependencies are incorporated in the simulation. The simulation tool was tuned with experimental data of devices fabricated making use of the Ni/HfO2 /Si stack. The variability and the stochastic behavior are characterized and reproduced correctly by simulation to understand the physics behind RS. Reset curves with several current steps are explained considering the rupture of different branches of the CF. The simulation approach allows to connect in a natural manner to compact modeling solutions for the devices under study.