Threshold voltage modeling of Gaussian-doped Dual work function Material Cylindrical Gate-all-around (CGAA) MOSFET considering the effect of temperature and fixed interface trapped charges. (February 2022)

• Record Type: Journal Article
• Authors: Banerjee, Pritha; Das, Jayoti
• Is Part Of: Microelectronics journal. Volume 120(2022)
• Publication Date: 2022-02
• Subjects: Gaussian-doped MOSFET -- Projected range -- Straggle -- Interface trapped charges -- Cylindrical Gate-all-around (CGAA) MOSFET -- Gate work function engineering (GWFE) -- Short channel effects (SCEs); Microelectronics -- Periodicals; Microélectronique -- Périodiques; Microelectronics; Electronic journals; Journals - contents and abstracts; Periodicals; 621.3805
• DOI: 10.1016/j.mejo.2021.105354
• Languages: English
• ISSNs: 0959-8324

Abstract

Abstract: Current research endeavor encompasses comprehensive threshold voltage analysis of a Gaussian-doped Dual work function Material (DM) Cylindrical Gate-all-around (CGAA) MOSFET with temperature variance in presence of fixed interface trap charges. Threshold voltage reliability over a wide range of temperature in presence of trap charges and its Gaussian-parameters such as projected range and straggle based dependencies are exhibited. Short channel response of the device has also been considered. Analytical results are corroborated through simulation outputs from Atlas.