P.8: Trap States in Amorphous In‐Sn‐Zn‐O Thin‐Film Transistors Analyzed Using Dependence on Channel Thickness. Issue 1 (1st July 2013)

• Record Type: Journal Article
• Authors: Matsuda, Tokiyoshi; Kimura, Mutsumi; Jiang, Jingxin; Wang, Dapeng; Furuta, Mamoru; Kasami, Masashi; Tomai, Shigekazu; Yano, Koki
• Is Part Of: Digest of technical papers. Volume 44:Issue 1(2013)
• Page Start: 1014
• Page End: 1017
• Publication Date: 2013-07-01
• Subjects: Trap State -- Amorphous In‐Sn‐Zn‐O (α‐ITZO) -- Thin‐Film Transistor (TFT) -- Channel Thickness; Information display systems -- Congresses; 621.3815422
• DOI: 10.1002/j.2168-0159.2013.tb06394.x
• Languages: English
• ISSNs: 0097-966X

Abstract

Abstract: Trap states in α‐ITZO TFTs are analyzed using the dependences of the trap densities on the channel thickness. Utilizing extraction methods of trap densities in the film, at the front and back interfaces it is suggested that the trap states are not distributed in the film but localized at the interface