Influence of B/N co-doping on electrical and photoluminescence properties of CVD grown homoepitaxial diamond films. (28th December 2021)

• Record Type: Journal Article
• Authors: Kunuku, Srinivasu; Ficek, Mateusz; Wieloszynska, Aleksandra; Tamulewicz-Szwajkowska, Magdalena; Gajewski, Krzysztof; Sawczak, Miroslaw; Lewkowicz, Aneta; Ryl, Jacek; Gotszalk, Tedor; Bogdanowicz, Robert
• Is Part Of: Nanotechnology. Volume 33:Number 12(2022)
• Publication Date: 2021-12-28
• Subjects: boron/nitrogen co-doped diamond -- homoepitaxial -- nitrogen-vacancy -- activation energy; Nanotechnology -- Periodicals; Nanotechnology -- Periodicals; Nanotechnology; Publications périodiques; Nanotechnologies; Periodicals; 620.5
• DOI: 10.1088/1361-6528/ac4130
• Languages: English
• ISSNs: 0957-4484

Abstract

Abstract: Boron doped diamond (BDD) has great potential in electrical, and electrochemical sensing applications. The growth parameters, substrates, and synthesis method play a vital role in the preparation of semiconducting BDD to metallic BDD. Doping of other elements along with boron (B) into diamond demonstrated improved efficacy of B doping and exceptional properties. In the present study, B and nitrogen (N) co-doped diamond has been synthesized on single crystalline diamond (SCD) IIa and SCD Ib substrates in a microwave plasma-assisted chemical vapor deposition process. The B/N co-doping into CVD diamond has been conducted at constant N flow of N/C ∼ 0.02 with three different B/C doping concentrations of B/C ∼ 2500 ppm, 5000 ppm, 7500 ppm. Atomic force microscopy topography depicted the flat and smooth surface with low surface roughness for low B doping, whereas surface features like hillock structures and un-epitaxial diamond crystals with high surface roughness were observed for high B doping concentrations. KPFM measurements revealed that the work function (4.74–4.94 eV) has not varied significantly for CVD diamond synthesized with different B/C concentrations. Raman spectroscopy measurements described the growth of high-quality diamond and photoluminescence studies revealed the formation of high-density nitrogen-vacancy centers in CVD diamond layers. X-ray photoelectron spectroscopy results confirmed the successful B doping and the increase in N doping with B doping concentration. The room temperature electrical resistance measurements of CVD diamond layers (B/C ∼ 7500 ppm) have shown the low resistance value ∼9.29 Ω for CVD diamond/SCD IIa, and the resistance value ∼16.55 Ω for CVD diamond/SCD Ib samples.