Cite
HARVARD Citation
Bae, H. et al. (2022). First demonstration of robust tri-gate β-Ga2O3 nano-membrane field-effect transistors. Nanotechnology. p. . [Online].
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Bae, H. et al. (2022). First demonstration of robust tri-gate β-Ga2O3 nano-membrane field-effect transistors. Nanotechnology. p. . [Online].