Automated Growth of Si1−xGex Single Crystals with Constant Axial Gradient by Czochralski Technique. Issue 2 (19th November 2019)

• Record Type: Journal Article
• Authors: Abrosimov, Nikolay V.; Kurlov, Vladimir N.; Schewski, Robert; Winkler, Jan
• Is Part Of: Crystal research and technology. Volume 55:Issue 2(2020)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2019-11-19
• Subjects: automated crystal growth -- Czochralski technique -- SiGe gradient crystals; Crystallography -- Periodicals; 548
• DOI: 10.1002/crat.201900097
• Languages: English
• ISSNs: 0232-1300

Abstract

Abstract: This contribution presents the growth of Si1− x Ge x crystals with constant gradient of composition for X‐ray or γ‐ray diffraction optics using automated control of the crystal shape during the growth process. The key idea is to achieve a constant concentration gradient by continuously decreasing the crystal diameter during the main crystal growth phase. For this purpose a concept has been developed for a proper planning of the radius trajectory matching all technological requirements. Si1− x Ge x single crystals with constant gradients between 0.10 and 0.16 at% cm −1 have been grown using an automated control system. Abstract : This contribution proposes a method for the automated growth of silicon–germanium (SiGe) crystals. To be used as X‐ray and γ‐ray monochromators such crystals must have a constant germanium concentration gradient in their body. This can be achieved by growing them in a special shape. How to compute the shape and technically realize it, is described in detail and experimentally verified.