A Phthalonitrile Resin with a Low Melting Point and High Storage Modulus Containing High‐Density Aromatic Ether Bonds. Issue 39 (16th October 2020)

• Record Type: Journal Article
• Authors: Shi, Xiaoyu; Bai, Shengnan; Ji, Puguang; Naito, Kimiyoshi; Yu, Xiaoyan; Zhang, Qingxin
• Is Part Of: ChemistrySelect. Volume 5:Issue 39(2020)
• Page Start: 12213
• Page End: 12217
• Publication Date: 2020-10-16
• Subjects: Aromatic ether bond -- Low melting point -- Materials science -- Phthalonitrile resin -- Polymers; Chemistry -- Periodicals; 540.5
• DOI: 10.1002/slct.202002755
• Languages: English
• ISSNs: 2365-6549

Abstract

Abstract: A low melting point phthalonitrile monomer named 4, 4′‐((((((2‐cyano‐1, 3‐phenylene)bis(oxy))bis(4, 1‐phenylene))bis(oxy))bis(4, 1‐phenylene))bis(oxy))diphthalonitrile (BOPN), was synthesized by nucleophilic substitution of 4, 4′‐oxydiphenol with 2, 6‐dichlorobenzonitrile. The BOPN resin containing high‐density aromatic ether bonds were prepared via bulk addition polymerization. Two kinds of polymers were prepared from BOPN monomer by using 4‐(aminophenoxy)phthalonitrile (APPH) as the curing agent under different curing procedures. The chemical structure of the monomer was determined by Nuclear Magnetic Resonance spectroscopy (NMR) and Fourier Transform Infrared spectroscopy (FTIR). Dynamic Mechanical Analysis (DMA) demonstrated that the storage modulus of the resin at room temperature was 3712 MPa and the glass transition temperature was above 400 °C. Differential Scanning Calorimetric (DSC) analysis and rheological test indicated that the melting point and processing window of the monomer were 92 °C and 118 °C, respectively. The temperature for 95 % weight retention of the polymer in air was 529 °C. Abstract : Phthalonitrile resin has excellent thermal stability and thermomechanical properties. The phthalonitrile resin containing high‐density aromatic ether bonds prepared in this study has a lower melting point and a wider processing window. It has broad application prospects in aerospace, national defense, microelectronic and other fields.