Single Crystal Growth of FeGa3 and FeGa3−xGex from High‐Temperature Solution Using the Czochralski Method. Issue 2 (16th September 2019)

• Record Type: Journal Article
• Authors: Bader, Kristian; Gille, Peter
• Is Part Of: Crystal research and technology. Volume 55:Issue 2(2020)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2019-09-16
• Subjects: Czochralski method -- intermetallic semiconductors -- solution growth -- thermoelectrics; Crystallography -- Periodicals; 548
• DOI: 10.1002/crat.201900067
• Languages: English
• ISSNs: 0232-1300

Abstract

Abstract: Single crystal growth and characterization of the binary semiconducting compound FeGa3 and its Ge‐substitute FeGa3– x Ge x are reported. Whereas there have been several investigations on the thermoelectric properties based on small samples grown by the flux method, this study is the first approach using the Czochralski growth technique from well‐oriented single‐crystalline seeds. Problems and solutions of the growth of cm 3 ‐size single crystals are discussed in detail. Ge segregation in FeGa3– x Ge x is described by a segregation coefficient lower than unity which leads to an axially increasing Ge content along the pulling direction. Consequences with respect to lattice parameter changes and thermoanalytic measurements are reported. Abstract : Single crystal growth of FeGa3 and FeGa3 – x Gex using the Czochralski method from Ga‐rich solutions is described for the first time. Partial substitution of Ga by Ge is investigated in detail. FeGa3 and FeGa3 − x Gex crystals allow fundamental studies on thermoelectric properties as well as on quantum critical fluctuations.