Cite
HARVARD Citation
Richter, E. et al. (2020). Growth and Properties of Intentionally Carbon‐Doped GaN Layers. Crystal research and technology. 55 (2), p. n/a. [Online].
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Richter, E. et al. (2020). Growth and Properties of Intentionally Carbon‐Doped GaN Layers. Crystal research and technology. 55 (2), p. n/a. [Online].