Monolayer Doping: A Shallow Acceptor of Phosphorous Doped in MoSe2 Monolayer (Adv. Electron. Mater. 1/2020). (13th January 2020)

• Record Type: Journal Article
• Authors: Xia, Yipu; Zhang, Junqiu; Yu, Zhoubin; Jin, Yuanjun; Tian, Hao; Feng, Yue; Li, Bin; Ho, Wingkin; Liu, Chang; Xu, Hu; Jin, Chuanhong; Xie, Maohai
• Is Part Of: Advanced Electronic Materials. Volume 6:Number 1(2020)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2020-01-13
• Subjects: Materials -- Electric properties -- Periodicals; Materials science -- Periodicals; Magnetic materials -- Periodicals; Electronic apparatus and appliances -- Periodicals; 537
• DOI: 10.1002/aelm.202070005
• Languages: English
• ISSNs: 2199-160X

Abstract

Abstract : Phosphorous doping in a MoSe2 monolayer is achieved by co‐deposition of P, Se, and Mo during molecular‐beam epitaxy, as reported by Maohai Xie and co‐workers in article number 1900830 . P atoms substitute Se in MoSe2, acting as acceptors and causing a Fermi‐level shift. The doping level can be tuned by changing the P/Se flux ratio. For dopants of the group‐V elements, the binding energy becomes shallower with increasing atomic mass.