P-type Doping of Organic Charge Transport Materials with Tungsten Oxide. Issue 1805 (20th August 2015)

• Record Type: Journal Article
• Authors: Li, X. M.; Yang, R. Y.; Cao, X. A.
• Editors: Augustynski, J.; Grosse, F.; Kumar, D.; Sanchez, F.; Santato, C.; Sun, X.W.; Vomiero, A.; Yamamoto, T.
• Is Part Of: MRS proceedings. Issue 1805(2015)
• Publication Date: 2015-08-20
• Subjects: organic, -- thin film, -- dopant; Electrical engineering -- Congresses; Physics -- Congresses; Materials -- Research -- Congresses; Materials science -- Congresses; 620.11
• DOI: 10.1557/opl.2015.762
• Languages: English
• ISSNs: 0272-9172

Abstract

ABSTRACT: The effects of WO3 doping in 4, 4'-bis-9-carbozyl biphenyl (CBP) were studied through detailed electrical device characterization. A series of hole-only devices have been fabricated, where the doping level was varied from 10-40mol% and the doped CBP thickness was varied from 5-40 nm. It was found that, to achieve effective doping for improved hole injection and transport, the doping level should be greater than 20mol% and the doped layer should be at least 10 nm thick. It was also found that an energy barrier exists at the doped and undoped CBP interface, resulting in an additional voltage drop. This finding was explained by a large downward shift of the Fermi level in WO3 -doped CBP, which causes band bending and depletion at the interface. Finally, simplified green phosphorescent organic light-emitting diodes (OLEDs) with CBP as the hole transport and host material were fabricated. With a WO3 -doped hole transport layer, the OLEDs attained brightness above 10 5 cd/m 2 at 20 mA/cm 2, and exhibited an improved reliability under constant-current stressing as compared to undoped OLEDs.