ZnO thin films applied as pH sensor in EGFET devices. Issue 1805 (23rd July 2015)

• Record Type: Journal Article
• Authors: C. Fernandes, Jessica; Mulato, Marcelo
• Editors: Augustynski, J.; Grosse, F.; Kumar, D.; Sanchez, F.; Santato, C.; Sun, X.W.; Vomiero, A.; Yamamoto, T.
• Is Part Of: MRS proceedings. Issue 1805(2015)
• Publication Date: 2015-07-23
• Subjects: pyrolysis, -- sensor, -- dopant; Electrical engineering -- Congresses; Physics -- Congresses; Materials -- Research -- Congresses; Materials science -- Congresses; 620.11
• DOI: 10.1557/opl.2015.719
• Languages: English
• ISSNs: 0272-9172

Abstract

ABSTRACT: Zinc oxide thin films prepared by sol-gel and doped with different aluminum percentages were deposited by spray-pyrolysis deposition techniques on FTO and ITO substrates. The films were applied as the sensitive layer of pH-sensors EGFET devices. ZnO:Al films on FTO substrates shows a decrease in sensor quality with the dopant percentage increase. The opposite occurs when the substrate was ITO. The best quality film to be used as pH-sensor on FTO substrates was the ZnO:Al (3%) with 29 mV/pH sensitivity value and linear adjust of 0.99. For ITO substrates the best quality was achieved for ZnO:Al (10%), with sensitivity about 30 mV/pH and 0.99 linear adjust.