Fabrication and characterization of silicon nanowires with MACE method to influence the optical properties. (2022)

• Record Type: Journal Article
• Authors: Kashyap, Vikas; Chaudhary, Neeru; Goyal, Navdeep; Saxena, Kapil
• Is Part Of: Materials today. Volume 49:Part 8(2022)
• Page Start: 3409
• Page End: 3413
• Publication Date: 2022
• Subjects: Metal assisted chemical etching -- Si-NWs -- FE-SEM -- Photoluminescence; Materials science -- Congresses -- Periodicals; 620.1
• DOI: 10.1016/j.matpr.2021.02.814
• Languages: English
• ISSNs: 2214-7853

Abstract

Abstract: We are presenting here fabrication of silicon (Si) nanowires (NWs) arrays by using Si (1 0 0) wafer as substrate, by metal assisted chemical etching (MACE) method. The Si-NWs growth on the Si wafer has been done by using etching time of 45 min in etching solution of hydrogen fluoride and hydrogen peroxide. X-ray diffraction (XRD) has been used for the structural analysis of NWs to estimate the crystalline size, micro-strain, dislocation density of fabricated nanostructures. The surface morphology of Si-NWs array has been studied through field effect scanning electron microscopy (FE-SEM). The optical properties like energy band gap of fabricated Si-NWs has been carried out through UV–Vis diffuse reflectance spectroscopy (UV DRS) and photoluminescence (PL) spectroscopy.