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HARVARD Citation
Low, R. et al. (2021). GaN-based MIS-HEMTs with Al2O3 dielectric deposited by low-cost and environmental-friendly mist-CVD technique. Applied physics express. p. . [Online].
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Low, R. et al. (2021). GaN-based MIS-HEMTs with Al2O3 dielectric deposited by low-cost and environmental-friendly mist-CVD technique. Applied physics express. p. . [Online].