(Invited)Logic Devices for Today and Tomorrow. (10th April 2018)

• Record Type: Journal Article
• Authors: Maszara, Witold P.
• Is Part Of: ECS transactions. Volume 85:Number 8(2018)
• Page Start: 15
• Page End: 25
• Publication Date: 2018-04-10
• Subjects: Electrochemistry -- Periodicals; Electrochemistry; Periodicals; Electronic journals; Electronic journal; 541.37
• DOI: 10.1149/08508.0015ecst
• Languages: English
• ISSNs: 1938-5862

Abstract

Abstract : We discuss CMOS and beyond-CMOS devices for advanced nodes of high performance technologies; from FinFETs and fully-depleted planar SOI devices of today to other fully-depleted devices of tomorrow such as gate-all-around devices (GAA) in horizontal and vertical configuration. We look at the prospects of alternative channel materials such as III-V, germanium, 2D materials and carbon nanotubes, and alternative gate dielectrics such as ferroelectrics. We also briefly discuss developments in device architectures beyond classic MOSFET, such as tunnel FETs and spin-based transport devices. Finally 3D stacking, an approach to device density improvement is also discussed. Design-technology co-optimization (DTCO) became integral and indispensable factor in formation of highly scaled technology.