Characterization of InN - In0.25Ga0.75N Quantum Well Laser Structure for 1330 nm Wavelength. (11th September 2015)

• Record Type: Journal Article
• Authors: Polash, Md. Mobarak Hossain; Alam, M. Shah
• Is Part Of: ECS transactions. Volume 69:Number 12(2015)
• Page Start: 71
• Page End: 80
• Publication Date: 2015-09-11
• Subjects: Electrochemistry -- Periodicals; Electrochemistry; Periodicals; Electronic journals; Electronic journal; 541.37
• DOI: 10.1149/06912.0071ecst
• Languages: English
• ISSNs: 1938-5862

Abstract

Abstract : A nitride based wurtzite-strained QW laser with 12Å InN well layer, 15Å In0.25 Ga0.75 N barrier layer and GaN SCH layer has been designed and characterized at 1330nm wavelength. To determine the electronic properties, a self-consistent method with 6-bands k.p formalism considering valence-band mixing effect, strain and polarization effect followed by Poisson's equation has been used. The interband momentum matrix elements, optical gain, spontaneous emission rate, and radiative current density have been calculated to analyze the optical properties of the laser. Due to the strain effect, the wave-function overlap integral was obtained as 43.27%. The structure is TE polarized with C1-HH1 and C1-LH1 dominating transitions, while the spontaneous emission rate per energy interval per unit volume was 7.21×10 27 s -1 cm -3 eV -1 at 1329.55nm. Furthermore, the radiative recombination rate and the radiative current density were 7.77×10 29 s -1 cm -3 and 149.19 Acm -2, respectively. The optical gain of the structure is 5261.52cm -1 at 1336.7nm for TE-polarization.