Ultralow‐Temperature Sol–Gel Route to Metal Oxide Semiconductors for Soft Platforms. Issue 20 (7th September 2016)

• Record Type: Journal Article
• Authors: Oh, Himchan; Yang, Jong‐Heon; Hwang, Chi‐Sun
• Is Part Of: Advanced materials interfaces. Volume 3:Issue 20(2016)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2016-09-07
• Subjects: oxide semiconductor -- soft platforms -- sol–gel routes -- solution process -- water immersion; Materials science -- Periodicals; 620.11
• DOI: 10.1002/admi.201600664
• Languages: English
• ISSNs: 2196-7350

Abstract

Abstract : By briefly soaking the sol–gel oxide films into hot water (80 °C), the curing temperature is dramatically lowered. Steeping in water promotes the oxidation of sol–gel films and helps to remove the contaminants inside, converting sol–gel coats to high‐quality metal oxide films at low temperatures. High‐performance, reliable metal oxide thin film transistors are successfully demonstrated through this method.