Visible-light photoelectric response in semiconducting quaternary oxysulfide FeOCuS with anti-PbO-type structure. Issue 98 (26th November 2021)

• Record Type: Journal Article
• Authors: Du, Wei; Zhang, Ganghua; Chen, Ping; Tang, Pingying; Wang, Jing; Li, Dezeng; Hou, Jingshan; Fang, Yongzheng
• Is Part Of: Chemical communications. Volume 57:Issue 98(2021)
• Page Start: 13393
• Page End: 13396
• Publication Date: 2021-11-26
• Subjects: Chemistry -- Periodicals; 540
• DOI: 10.1039/d1cc05575e
• Languages: English
• ISSNs: 1359-7345

Abstract

Abstract : A novel anti-PbO-type quaternary oxysulfide, FeOCuS was presented with a high photocurrent density of 3.89 mA cm −2 under visible-light illumination. Abstract : A novel quaternary oxysulfide, FeOCuS has been successfully synthesized with a tetragonal anti-PbO-type structure and a visible-light bandgap of about 1.37 eV. Driven by only a 0.4 V bias voltage under simulated AM 1.5 G illumination, a high photocurrent density of 3.89 mA cm −2 has been achieved, revealing the potential optoelectronic applications.