Cite
HARVARD Citation
Baig, M. et al. (2022). Compact model of retention characteristics of ferroelectric FinFET synapse with MFIS gate stack. Semiconductor science and technology. p. . [Online].
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Baig, M. et al. (2022). Compact model of retention characteristics of ferroelectric FinFET synapse with MFIS gate stack. Semiconductor science and technology. p. . [Online].