Cite
HARVARD Citation
Kim, M. et al. (2021). (100) Plane β-Ga2O3 Flake Based Field Effect Transistor and Its Hydrogen Response. ECS journal of solid state science and technology. p. . [Online].
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Kim, M. et al. (2021). (100) Plane β-Ga2O3 Flake Based Field Effect Transistor and Its Hydrogen Response. ECS journal of solid state science and technology. p. . [Online].