Excellent transverse power generation and cooling performances of artificially tilted thermoelectric film devices. (December 2019)

• Record Type: Journal Article
• Authors: Mu, Xin; Zhu, Wanting; Zhao, Wenyu; Zhou, Hongyu; Sun, Zhigang; Li, Cuncheng; Ma, Shifang; Wei, Ping; Nie, Xiaolei; Yang, Jihui; Zhang, Qingjie
• Is Part Of: Nano energy. Volume 66(2019)
• Publication Date: 2019-12
• Subjects: Thermoelectric -- Power generation -- Microelectronic cooling -- Artificially tilted thermoelectric film devices; Nanoscience -- Periodicals; Nanotechnology -- Periodicals; Nanostructured materials -- Periodicals; Power resources -- Technological innovations -- Periodicals; Nanoscience; Nanostructured materials; Nanotechnology; Power resources -- Technological innovations; Periodicals; 621.042
• DOI: 10.1016/j.nanoen.2019.104145
• Languages: English
• ISSNs: 2211-2855

Abstract

Abstract: Large transverse output voltage of transverse thermoelectric film devices is key for their important applications. Currently, the transverse output voltage is only several to tens of μV·K −1 due to the great challenge that multilayer films with a nanometer-scale thickness are tilted in transverse thermoelectric film devices. Herein, a novel misaligned mask method is developed to low-costly fabricate artificially tilted thermoelectric film devices (ATTFDs) with excellent transverse power generation and cooling performances through accurately controlling the tilted arrangement of nanometer-scale multilayer films. The huge transverse output voltage of 300 μV K −1 and cooling temperature gradient of 68 K·mm −1 are obtained for the first time in Bi/Bi0.5 Sb1.5 Te3 ATTFDs, which are comparable to those from expensive superlattice-based thermoelectric devices. Our work demonstrates that ATTFDs can be narrow-space applied to high-efficient film refrigerators in next-generation electronics and optoelectronics, high-sensitive thermal response sensors, thermoelectric-driven inorganic LED film devices. Graphical abstract: Image 1 Highlights: A novel misaligned mask method is developed to fabricate thermoelectric film device. Excellent Bi/Bi0.5 Sb1.5 Te3 artificially tilted thermoelectric film device is obtained. The transverse output voltage reaches 300 μV K −1 The cooling temperature gradient of 68 K·mm −1 is comparable to superlattice device.