Negative capacitance independent multi-gate FinFETs and their optimisations. Issue 8 (3rd August 2019)

• Record Type: Journal Article
• Authors: Yang, Tingfeng; Hu, Jianping; Ni, Haiyan
• Is Part Of: International journal of electronics. Volume 106:Issue 8(2019)
• Page Start: 1229
• Page End: 1247
• Publication Date: 2019-08-03
• Subjects: Beyond CMOS -- negative capacitance FET (NCFET) -- low power consumption -- device optimisation -- independent multi-gate FinFET; Electronics -- Periodicals; Electronic control -- Periodicals; 621.381
• DOI: 10.1080/00207217.2019.1584918
• Languages: English
• ISSNs: 0020-7217

Abstract

ABSTRACT: In order to reduce the operating voltage of FinFET and increase the flexibility of integrated circuit design, we have proposed a Negative Capacitance Independent Multi-Gate FinFET (NC-IMG-FinFET) with Ferroelectric-Metal-Insulator-Semiconductor-Insulator (FMISI) structure. Both the device and circuit analysis model of NC-IMG-FinFET are addressed, which are used to analyse the performance parameters of the device (the surface potential, internal gate voltage amplification, Sub-threshold Swing (SS), on-current and leakage) and the performance of a circuit (delay, power consumption, power delay product (PDP)). The simulation model of the NC-IMG-FinFET has been constructed by combining BSIM-IMG model with ferroelectric Landau-Khalatnikov model. The optimisations for ferroelectric film thickness of the NC-IMG-FinFETs are carried out in terms of device characteristics and circuit performances. The simulation results are consistent with the analysis results, indicating that the NC-IMG-FinFET has superior performance compared with the baseline device, in terms of smaller leakage, larger on/off current ratio and smaller SS (38.3 mV/dec at room temperature). Compared with the baseline IMG-FinFET circuits, there is large performance improvement for the NC-IMG-FinFET circuits, in terms of the power consumption and PDP.