Atomic‐Scale Characterization of Negative Differential Resistance in Ferroelectric Bi2WO6. (7th October 2021)

• Record Type: Journal Article
• Authors: Song, Chuangye; Mao, Huican; Yang, Yuben; Liu, Xin; Yin, Zhiping; Hu, Zhenpeng; Wu, Kehui; Zhang, Jinxing
• Is Part Of: Advanced functional materials. Volume 32:Number 2(2022)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2021-10-07
• Subjects: Bi 2WO 6 -- layered ferroelectrics -- negative differential resistance -- scanning tunneling microscopy/spectroscopy -- quantum well; Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adfm.202105256
• Languages: English
• ISSNs: 1616-301X

Abstract

Abstract: Negative differential resistance (NDR), a quantum nonlinear electron transport process, has long attracted research interest owing to its intriguing underlying physics and promising applications in high‐speed electronics. Here, the authors report the NDR behavior in (001)‐oriented ferroelectric Bi2 WO6 using scanning tunneling microscopy (STM). The current–voltage characteristics of the diode configuration consisting of an STM tip over the [BiO] + ‐[WO4 ] 2− ‐[BiO] + terrace exhibit NDR features. Scanning tunneling spectroscopy combined with density functional theory calculations indicates that the observed NDR results from robust resonant tunneling through confined energy levels within the 2D [WO4 ] 2− layer. The atomically resolved NDR found in such a transition metal oxide offers a unique band structure for novel ferroelectric‐based devices. Abstract : Negative differential resistance (NDR) behaviors are observed in (001)‐oriented ferroelectric Bi2 WO6 terraces by using scanning tunneling microscopy, indicating a robust resonant tunneling through confined energy levels within the two‐dimensional [WO4 ] 2‐ quantum well. The atomically resolved NDR found in such a transition metal oxide offers a unique band structure for novel ferroelectric‐based devices (fast switches, oscillators, and frequency‐locking circuits).