Self-powered MoSe2/ZnO heterojunction photodetectors with current rectification effect and broadband detection. (15th December 2021)

• Record Type: Journal Article
• Authors: Wan, Zhichen; Mu, Haoran; Dong, Zhuo; Hu, Sigui; Yu, Wenzhi; Lin, Shenghuang; Mokkapati, Sudha
• Is Part Of: Materials & design. Volume 212(2021)
• Publication Date: 2021-12-15
• Subjects: Van der Waals -- Molybdenum disulphide -- Zinc oxide -- Self-powered photodetector; Materials -- Periodicals; Engineering design -- Periodicals; Matériaux -- Périodiques; Conception technique -- Périodiques; Electronic journals; 620.11
• DOI: 10.1016/j.matdes.2021.110185
• Languages: English
• ISSNs: 0264-1275

Abstract

Graphical abstract: Highlights: The MoSe2 /ZnO heterostructure forms an n - n heterojunction with rectifying behaviour. The MoSe2 /ZnO photodetector shows a fast response time of ∼50 µs. Built-in potential at the MoSe2 /ZnO interface facilitate self-powered photodetection. Abstract: Recently, n - n junction with large bandgap offset has been reported to be able to realize rectifier function and improve photoresponse in optoelectronic applications. In this work, we demonstrate a simple way to engineer photodetector based on a MoSe2 /ZnO heterojunction. ZnO thin film deposited by DC magnetron sputtering and mechanically exfoliated MoSe2 was coupled to form vertical stacking heterostructure. An atomically sharp n - n junction with type-II band alignment and current rectification behaviour is realised. The MoSe2 /ZnO based photodetector exhibits a fast photoresponse speed of 40 μs, and a peak responsivity of 2.7 A/W. It is also demonstrated that the MoSe2 /ZnO photodiode can operate under self-powered mode over a broad spectrum.