A New Strategy for Selective Area Growth of Highly Uniform InGaAs/InP Multiple Quantum Well Nanowire Arrays for Optoelectronic Device Applications (Adv. Funct. Mater. 3/2022). (14th January 2022)

• Record Type: Journal Article
• Authors: Zhang, Fanlu; Zhang, Xutao; Li, Ziyuan; Yi, Ruixuan; Li, Zhe; Wang, Naiyin; Xu, Xiaoxue; Azimi, Zahra; Li, Li; Lysevych, Mykhaylo; Gan, Xuetao; Lu, Yuerui; Tan, Hark Hoe; Jagadish, Chennupati; Fu, Lan
• Is Part Of: Advanced functional materials. Volume 32:Number 3(2022)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2022-01-14
• Subjects: infrared photodetectors -- InGaAs/InP -- lasing -- nanowires -- quantum well; Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adfm.202270020
• Languages: English
• ISSNs: 1616-301X

Abstract

Abstract : Infrared Photodetectors In article number 2103057, Ziyuan Li, Lan Fu, and co‐workers develop a new crystal facet engineering strategy to achieve epitaxial growth of highly uniform InGaAs/InP multiple quantum well nanowire arrays. This leads to the demonstration of a low threshold room temperature nanowire laser and broadband infrared photodetector with high responsivity and fast response time, promising for optical communication applications.