Cite
HARVARD Citation
Liu, S. et al. (2021). Four-inch high quality crack-free AlN layer grown on a high-temperature annealed AlN template by MOCVD. Journal of semiconductors. p. . [Online].
This is an interim version of our Electronic Legal Deposit Catalogue-eJournals and eBooks while we continue to recover from a cyber-attack.
Liu, S. et al. (2021). Four-inch high quality crack-free AlN layer grown on a high-temperature annealed AlN template by MOCVD. Journal of semiconductors. p. . [Online].