Investigate the fast melting process of 2D SiC model by molecular dynamics. Issue 1 (May 2021)

• Record Type: Journal Article
• Authors: Van On, Vo; Nhi, Nguyen Thị Thuy; Hung, Nguyen Thanh
• Is Part Of: Journal of physics. Volume 1921:Issue 1(2021)
• Publication Date: 2021-05
• Subjects: Physics -- Congresses; 530.5
• DOI: 10.1088/1742-6596/1921/1/012114
• Languages: English
• ISSNs: 1742-6588

Abstract

Abstract: This paper presents the results of the study of fast melting process of 2-dimensional SiC by MD simulation with a sample of 400 atoms which consists of 200 Si atoms and 200 C atoms. The model is melted from 300K to 8000K at a rate of 10 13 K/s. Investigation of energy dependence on temperature shows a jump of the average total energy of SiC model at temperature T = 5090K. Investigation of material microstructure by a radial distribution function, ring distribution, bonding angle distribution, even distribution number distribution showed that the phase transition temperature was about 5090K.