Thermal Decomposition of Tungsten Nitrido Precursors for Low Temperature MOCVD of WNxCy. (10th September 2015)

• Record Type: Journal Article
• Authors: Kim, Seo Young; Koley, Arijit; Bonsu, Richard; Nolan, Michelle; McElwee-White, Lisa; Anderson, Tim
• Is Part Of: ECS transactions. Volume 69:Number 6(2015)
• Page Start: 101
• Page End: 110
• Publication Date: 2015-09-10
• Subjects: Electrochemistry -- Periodicals; Electrochemistry; Periodicals; Electronic journals; Electronic journal; 541.37
• DOI: 10.1149/06906.0101ecst
• Languages: English
• ISSNs: 1938-5862

Abstract

Abstract : Tungsten nitrido complexes of the type WN(NR2 )3 have been demonstrated to serve as single-source precursors for metal organic chemical vapor deposition (MOCVD) of WNx Cy barrier layers. To elucidate the thermal decomposition mechanisms for WN(NMe2 )3 and to optimize conditions for deposition of WNx Cy films, in-situ Raman spectroscopy experiments were carried out in an up-flow, cold-wall MOCVD reactor. In this study, Raman spectra were detected at temperatures from 159 o C to 474 o C. Density Functional Theory (DFT) calculations were also performed to assess possible steps in the mechanistic pathway.