Cite
HARVARD Citation
Peres, M. et al. (2017). Doping β-Ga2O3 with europium: influence of the implantation and annealing temperature. Journal of physics. p. . [Online].
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Peres, M. et al. (2017). Doping β-Ga2O3 with europium: influence of the implantation and annealing temperature. Journal of physics. p. . [Online].