Preparation of β-Ga2O3 nanostructured films by thermal oxidation of GaAs substrate. Issue 4 (15th February 2022)

• Record Type: Journal Article
• Authors: Chen, Wei; Jiao, Teng; Li, Zeming; Diao, Zhaoti; Li, Zhengda; Dong, Xin; Zhang, Yuantao; Zhang, Baolin
• Is Part Of: Ceramics international. Volume 48:Issue 4(2022)
• Page Start: 5698
• Page End: 5703
• Publication Date: 2022-02-15
• Subjects: β-Ga2O3 -- Thermal oxidization -- Nanowires -- Heterojunction; Ceramics -- Periodicals; Céramique industrielle -- Périodiques; Ceramics; Periodicals; Electronic journals; 666
• DOI: 10.1016/j.ceramint.2021.11.115
• Languages: English
• ISSNs: 0272-8842

Abstract

Abstract: The β-Ga2 O3 nanostructures of one-dimensional (1D) nanowires (NWs) and bulk films were prepared by thermal oxidation (TO) of GaAs substrate. The growth mechanisms of β-Ga2 O3 are discussed in detail. The formation of these NW structures is closely linked to the process of oxygen-free annealing. The two kinds of nanostructured films have distinct structure differences while the same crystal plane orientation. Compared with bulk films, the NW films show higher donor-acceptor pair-induced blue emission. A p -GaAs/β‐Ga2 O3 NWs heterojunction was fabricated with a turn-on voltage of 1.3 V matching well with simulation results. The proposed method can flexibly and catalyst-free prepare high-quality, high surface-to-volume ratio and uniform β-Ga2 O3 NW films, which is promising for optoelectronics and gas sensing.