Quasistatic Equilibrium Chemical Vapor Deposition of Graphene. Issue 1 (21st November 2021)

• Record Type: Journal Article
• Authors: Ullah, Sami; Ta, Huy Q.; Yang, Xiaoqin; Liu, Yu; Hasan, Maria; Bachmatiuk, Alicja; Liu, Lijun; Rümmeli, Mark H.
• Is Part Of: Advanced materials interfaces. Volume 9:Issue 1(2022)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2021-11-21
• Subjects: CVD growth -- graphene -- high quality -- quasistatic equilibrium -- substrate -- synthesis; Materials science -- Periodicals; 620.11
• DOI: 10.1002/admi.202101500
• Languages: English
• ISSNs: 2196-7350

Abstract

Abstract: This study reviews the majorly used chemical vapor deposition (CVD) with a focus on confined reaction configurations in which quasistatic equilibrium conditions are obtained for the fabrication of graphene with large size and high quality through controlled nucleation density, feedstock flux, and growth rates. The confinement configurations can also be used to tune the thickness, domain size and shape, and stacking order of the synthetic graphene. The confined CVD reaction configurations discussed include enclosure systems, inner‐tube setups, sandwiched substrates, as well as other types of configurations. The advantages and limitations of the different confinement configurations are presented, along ways to optimize the operational parameters for them. Abstract : Quasistatic equilibrium growth in confined reaction configurations (enclosure systems, inner‐tube setups, sandwiched substrates, etc.) in a chemical vapor deposition system for high quality and large area graphene synthesis.