Large‐Area Endohedral Metallofullerene Single‐Crystal Arrays for High‐Performance Field‐Effect Transistors and Photodetectors. (8th October 2021)

• Record Type: Journal Article
• Authors: Su, Mingming; Hu, Yajing; Yang, Shaoting; Yu, Ao; Peng, Ping; Yang, Le; Jin, Peng; Su, Bin; Li, Fang‐Fang
• Is Part Of: Advanced Electronic Materials. Volume 8:Number 1(2022)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2021-10-08
• Subjects: endohedral metallofullerenes -- field‐effect transistors -- microwire arrays -- photodetectors -- single crystals; Materials -- Electric properties -- Periodicals; Materials science -- Periodicals; Magnetic materials -- Periodicals; Electronic apparatus and appliances -- Periodicals; 537
• DOI: 10.1002/aelm.202100753
• Languages: English
• ISSNs: 2199-160X

Abstract

Abstract: A structure with high crystallinity and orderly molecular packing is a requirement for high‐performance optoelectronic devices. However, growing large‐area, long‐range order, highly crystalline micro or nanostructures remains a challenge. Endohedral metallofullerenes (EMFs) are spherical π‐conjugated molecules with unique electronic structures, hence they can be easily assembled into highly ordered crystals through intermolecular π–π interactions. In this work, large‐area single‐crystal microwire arrays of M3 N@ Ih ‐C80 (M = Sc, Lu) are prepared with the assistance of a pillar‐structured template, and the microwire diameter can be tuned via the fullerene concentration. A field‐effect transistor is fabricated using Sc3 N@ Ih ‐C80 microwire arrays, exhibiting a record‐high charge carrier mobility (6.16 cm 2 V −1 s −1 ) among EMF‐based devices. Further, microwire‐based photodetectors are developed, with a response time as low as 0.1 s. The precise arrangement of the M3 N@ Ih ‐C80 molecules helps improve the electron transportation channels, thereby enhancing the device performance. Abstract : Spherical π‐conjugated endohedral metallofullerenes (EMFs) (M3 N@ Ih ‐C80, M = Sc, Lu) are assembled into large‐area single‐crystal arrays using a pillar‐structured template. The field‐effect transistor and photodetector based on Sc3 N@ Ih ‐C80 microwire arrays exhibit respectively a record‐high charge carrier mobility (μ = 6.16 cm 2 V −1 s −1 ) of EMF‐based devices and a response time as low as 0.1 s.