Topological phase transition of Bi2–xInxTe3. (10th January 2020)

• Record Type: Journal Article
• Authors: Jing, Q.; Jiang, W. X.; Yang, Z. Q.; Wang, J. F.; Yao, M. Y.; Zhu, F. F.; Li, Y. L.; Li, S. B.; Hu, J. Y.; Xu, C. H.; Liu, B.; Qian, D.
• Is Part Of: Europhysics letters. Volume 128:Number 3(2019)
• Publication Date: 2020-01-10
• Subjects: 79.60.-i -- 73.20.-r -- 73.20.At; Physics -- Periodicals; Electronic journals; 530.05
• DOI: 10.1209/0295-5075/128/37001
• Languages: English
• ISSNs: 0295-5075

Abstract

Abstract: Compared with Bi2 Se3 with its Dirac point in the bulk gap, the Dirac point of Bi2 Te3 is in the valence band, then it is generally considered that it is difficult to observe the topological phase transition course in the Bi2 Te3 system via nonmagnetic lighter element doping. Here, we report the phase transition of Bi2– x In x Te3, from a topological insulator to a trivial band insulator observed by angle-resolved photoemission spectroscopy. The robust surface state exists in the range of . At, the surface state completely disappears and only the bulk gap exists, suggesting a sudden gap closure and topological phase transition around .