Electrical and Optical Characteristics of SSI-LED Made from Capacitor Containing Tri-Layer WOx Embedded Zr-Doped HfOx Gate Dielectric. (28th December 2021)

• Record Type: Journal Article
• Authors: Lin, Wen-Shan; Kuo, Yue
• Is Part Of: ECS journal of solid state science and technology. Volume 10:Number 12(2021)
• Publication Date: 2021-12-28
• Subjects: Solid state chemistry -- Periodicals; Electronics -- Materials -- Periodicals; Electrochemistry -- Periodicals; 541.0421
• DOI: 10.1149/2162-8777/ac44f5
• Languages: English
• ISSNs: 2162-8777

Abstract

Abstract : Solid-state incandescent light emitting devices made from MOS capacitors with the WOx embedded Zr-doped HfOx gate dielectric were characterized for electrical and optical characteristics. Devices made from capacitors containing Zr-doped HfOx and WOx, gate dielectrics were also fabricated for comparison. The device with the WOx embedded gate dielectric layer had electrical and light emitting characteristics between that with WOx gate dielectric layer and that with the Zr-doped HfOx but no WOx embedded gate dielectric layer. The difference can be explained by the nano-resistor formation process and the content of the high emissivity W in the nano-resistor. The device made from the WOx embedded Zr-doped HfOx gate dielectric MOS capacitor is applicable to areas where uniform emission of warm white light is required.