UV electroluminescence emissions from high-quality ZnO/ZnMgO multiple quantum well active layer light-emitting diodes. Issue 62 (6th December 2021)

• Record Type: Journal Article
• Authors: Chen, Shanshan; Zhan, Tengrun; Pan, Xinhua; He, Haiping; Huang, Jingyun; Lu, Bin; Ye, Zhizhen
• Is Part Of: RSC advances. Volume 11:Issue 62(2021)
• Page Start: 38949
• Page End: 38955
• Publication Date: 2021-12-06
• Subjects: Chemistry -- Periodicals; 540.5
• DOI: 10.1039/d1ra06685d
• Languages: English
• ISSNs: 2046-2069

Abstract

Abstract : ZnO/ZnMgO MQWs was employed as an active layer to fabricate p-GaN/MQWs/n-ZnO diode by molecular beam epitaxy. It showed sharp and efficient UV emission around 370 nm due to constraint of carriers in high-quality MQWs well layer. Abstract : 5-period ZnO/Zn0.9 Mg0.1 O multiple quantum wells (MQWs) were employed as active layers to fabricate the p-GaN/MQWs/n-ZnO diode by molecular beam epitaxy. It exhibited an efficient UV emission around 370 nm at room temperature. Calculated band structures and carrier distributions showed that electrons were restricted to overflow to the p-type layer, and carriers were confined in the high-quality MQWs well layer.