Dominant acceptors in Li doped, magnetron deposited Cu2O films. (17th December 2021)

• Record Type: Journal Article
• Authors: Nyborg, M; Karlsen, K; Bergum, K; Monakhov, E
• Is Part Of: Materials research express. Volume 8:Number 12(2021)
• Publication Date: 2021-12-17
• Subjects: cuprous oxide -- doping -- lithium -- carrier transport -- magnetron sputtering; Materials science -- Research -- Periodicals; Materials science -- Periodicals; 620.11
• DOI: 10.1088/2053-1591/ac3e24
• Languages: English
• ISSNs: 2053-1591

Abstract

Abstract: Cu2 O films deposited by reactive magnetron sputtering with varying Li concentrations have been investigated by a combination of temperature-dependent Hall effect measurement and thermal admittance spectroscopy. As measured by secondary ion mass spectrometry, Li concentrations up to 5 × 10 20 Li/cm 3 have been achieved. Li doping significantly alters the electrical properties of Cu2 O and increases hole concentration at room temperature for higher Li concentrations. Moreover, the apparent activation energy for the dominant acceptors decreases from around 0.2 eV for undoped or lightly doped Cu2 O down to as low as 0.05 eV for higher Li concentrations.