Charge Transfer at the Hetero‐Interface of WSe2/InSe Induces Efficient Doping to Achieve Multi‐Functional Lateral Homo‐Junctions (Adv. Electron. Mater. 12/2021). (9th December 2021)

• Record Type: Journal Article
• Authors: Xu, Bo; Li, Yang; Sun, Zhao‐Yuan; Zhao, Ze; Yang, Li; Gao, Feng; Hu, Ping‐An; Zhen, Liang; Xu, Cheng‐Yan
• Is Part Of: Advanced Electronic Materials. Volume 7:Number 12(2021)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2021-12-09
• Subjects: Materials -- Electric properties -- Periodicals; Materials science -- Periodicals; Magnetic materials -- Periodicals; Electronic apparatus and appliances -- Periodicals; 537
• DOI: 10.1002/aelm.202170058
• Languages: English
• ISSNs: 2199-160X

Abstract

Abstract : Lateral Homo‐Junctions In article number 2100584, Cheng‐Yan Xu, Yang Li and co‐workers demonstrate that charge transfer at the hetero‐interface is an efficient doping strategy to create lateral homo‐junctions with competitive multi‐functional performance. The lateral WSe2 homojunctions exhibit promising rectification, photodetection, and photovoltaic characteristics with a maximum FF of 0.39, PCE of 0.3%, and EQE of 24.5%.