Revisiting the Chemical Stability of Germanium Selenide (GeSe) and the Origin of its Photocatalytic Efficiency. (17th September 2021)
- Record Type:
- Journal Article
- Title:
- Revisiting the Chemical Stability of Germanium Selenide (GeSe) and the Origin of its Photocatalytic Efficiency. (17th September 2021)
- Main Title:
- Revisiting the Chemical Stability of Germanium Selenide (GeSe) and the Origin of its Photocatalytic Efficiency
- Authors:
- Boukhvalov, Danil W.
Nappini, Silvia
Vorokhta, Mykhailo
Menteş, Tevfik Onur
Piliai, Lesia
Panahi, Mohammad
Genuzio, Francesca
De Santis, Jessica
Kuo, Chia‐Nung
Lue, Chin Shan
Paolucci, Valentina
Locatelli, Andrea
Bondino, Federica
Politano, Antonio - Abstract:
- Abstract: Recently, germanium selenide (GeSe) has emerged as a promising van der Waals semiconductor for photovoltaics, solar light harvesting, and water photoelectrolysis cells. Contrary to previous reports claiming perfect ambient stability based on experiments with techniques without surface sensitivity, here, by means of surface‐science investigations and density functional theory, it is demonstrated that actually both: i) the surface of bulk crystals; and ii) atomically thin flakes of GeSe are prone to oxidation, with the formation of self‐assembled germanium‐oxide skin with sub‐nanometric thickness. Surface oxidation leads to the decrease of the bandgap of stoichiometric GeSe and GeSe1− x, while bandgap energy increases upon surface oxidation of Ge1− x Se. Remarkably, the formation of a surface oxide skin on GeSe crystals plays a key role in the physicochemical mechanisms ruling photoelectrocatalysis: the underlying van der Waals semiconductor provides electron–hole pairs, while the germanium‐oxide skin formed upon oxidation affords the active sites for catalytic reactions. The self‐assembled germanium‐oxide/germanium‐selenide heterostructure with different bandgaps enables the activation of photocatalytic processes by absorption of light of different wavelengths, with inherently superior activity. Finally, it is discovered that, depending on the specific solvent‐GeSe interaction, the liquid phase exfoliation of bulk crystals can induce the formation of Se nanowires.Abstract: Recently, germanium selenide (GeSe) has emerged as a promising van der Waals semiconductor for photovoltaics, solar light harvesting, and water photoelectrolysis cells. Contrary to previous reports claiming perfect ambient stability based on experiments with techniques without surface sensitivity, here, by means of surface‐science investigations and density functional theory, it is demonstrated that actually both: i) the surface of bulk crystals; and ii) atomically thin flakes of GeSe are prone to oxidation, with the formation of self‐assembled germanium‐oxide skin with sub‐nanometric thickness. Surface oxidation leads to the decrease of the bandgap of stoichiometric GeSe and GeSe1− x, while bandgap energy increases upon surface oxidation of Ge1− x Se. Remarkably, the formation of a surface oxide skin on GeSe crystals plays a key role in the physicochemical mechanisms ruling photoelectrocatalysis: the underlying van der Waals semiconductor provides electron–hole pairs, while the germanium‐oxide skin formed upon oxidation affords the active sites for catalytic reactions. The self‐assembled germanium‐oxide/germanium‐selenide heterostructure with different bandgaps enables the activation of photocatalytic processes by absorption of light of different wavelengths, with inherently superior activity. Finally, it is discovered that, depending on the specific solvent‐GeSe interaction, the liquid phase exfoliation of bulk crystals can induce the formation of Se nanowires. Abstract : The formation of a surface oxide skin on GeSe crystals plays a key role in the physicochemical mechanisms ruling photoelectrocatalysis: the underlying van der Waals semiconductor provides electron–hole pairs, while the germanium‐oxide skin formed upon oxidation affords the active sites for catalytic reactions. … (more)
- Is Part Of:
- Advanced functional materials. Volume 31:Number 50(2021)
- Journal:
- Advanced functional materials
- Issue:
- Volume 31:Number 50(2021)
- Issue Display:
- Volume 31, Issue 50 (2021)
- Year:
- 2021
- Volume:
- 31
- Issue:
- 50
- Issue Sort Value:
- 2021-0031-0050-0000
- Page Start:
- n/a
- Page End:
- n/a
- Publication Date:
- 2021-09-17
- Subjects:
- 2D materials -- density functional theory calculations -- catalysis -- germanium selenide -- surface science
Materials -- Periodicals
Chemical vapor deposition -- Periodicals
620.11 - Journal URLs:
- http://onlinelibrary.wiley.com/journal/10.1002/(ISSN)1616-3028 ↗
http://onlinelibrary.wiley.com/ ↗ - DOI:
- 10.1002/adfm.202106228 ↗
- Languages:
- English
- ISSNs:
- 1616-301X
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - 0696.853900
British Library DSC - BLDSS-3PM
British Library HMNTS - ELD Digital store - Ingest File:
- 20197.xml