Perovskite Metal–Oxide–Semiconductor Structures for Interface Characterization (Adv. Mater. Interfaces 20/2021). Issue 20 (22nd October 2021)

• Record Type: Journal Article
• Authors: Cunha, José M. V.; Barreiros, M. Alexandra; Curado, Marco A.; Lopes, Tomás S.; Oliveira, Kevin; Oliveira, António J. N.; Barbosa, João R. S.; Vilanova, António; Brites, Maria João; Mascarenhas, João; Flandre, Denis; Silva, Ana G.; Fernandes, Paulo A.; Salomé, Pedro M. P.
• Is Part Of: Advanced materials interfaces. Volume 8:Issue 20(2021)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2021-10-22
• Subjects: metal–oxide–semiconductors -- perovskite and charge carrier transport layer interface -- SnO 2/perovskite interface traps; Materials science -- Periodicals; 620.11
• DOI: 10.1002/admi.202170113
• Languages: English
• ISSNs: 2196-7350

Abstract

Abstract : Perovskite MOS Structures In article number 2101004, José M. V. Cunha and co‐workers demonstrate that AC measurements performed on metal–oxide–semiconductor devices (MOS) allow for the study of the density of interface defects and interface fixed oxide charges present in the electron transport layer/perovskite interface, allowing for the development of highly‐efficient perovskite solar cells, which have several applications, e.g., build‐integrated photovoltaics.