MXene-based mixed-dimensional Schottky heterojunction towards self-powered flexible high-performance photodetector. (November 2021)

• Record Type: Journal Article
• Authors: Zhang, Y.; Xu, Y.; Gao, L.; Liu, X.; Fu, Y.; Ma, C.; Ge, Y.; Cao, R.; Zhang, X.; Al-Hartomy, O.A.; Wageh, S.; Al-Ghamdi, A.; Algarni, H.; Shi, Z.; Zhang, H.
• Is Part Of: Materials today physics. Volume 21(2022)
• Publication Date: 2021-11
• Subjects: Mixed-dimensional -- Nb2C@Bi Schottky heterojunctions -- Flexible -- Self-powered -- Photodetector; Materials science -- Periodicals; Physics -- Periodicals; Electronic journals; 530.41
• DOI: 10.1016/j.mtphys.2021.100479
• Languages: English
• ISSNs: 2542-5293

Abstract

Abstract: 0D Bismuth nanoparticles (Bi NPs) are grown on the surface of 2D few-layer Nb2 CTx MXene to form the mixed-dimensional Nb2 CTx @Bi Schottky heterojunction. The large surface to volume area characteristic of 2D Nb2 CTx nanosheets can provide the sufficient sites for the growth of Bi NPs, which can not only prevent the aggregation of Bi NPs, but also effectively shorten the length and transmission time of charge transfer. The Schottky heterojunction generated at the interface could lead to the uniflow spreading process of electrons/holes, promotes the separation of photo-induced electron/hole pairs, and suppress the carrier recombination dynamics, thus leading to the enhanced performance of Nb2 CTx @Bi-based optoelectronic devices. Systematic investigations demonstrate that Nb2 CTx @Bi-based flexible photoelectrochemical (PEC)-type photodetector shows self-powered photodetection capability with fast response/recovery time (0.08/0.08 s), a photocurrent of 1.56 μA cm −2, a responsivity of 585.25 μA W −1, and a specific detectivity of 4.63 × 10 12 Jones. The photodetector exhibits self-powered capability after bending 180° for 1000 cycles. Additionally, the repeatable and reproducible ON/OFF signals can be detected after placing the photodetector in alkaline electrolyte for one month, suggesting the potential of Nb2 CTx @Bi Schottky heterojunctions for practical applications in flexible optoelectronics. Graphical abstract: Mixed-dimensional MXene-based Schottky heterojunction is prepared and applied for flexible photoelectrochemical (PEC)-type photodetector. Image 1 Highlights: Mixed-dimensional 2D Nb2 CTx @ 0D Bi Schottky Heterojunction is prepared. The DFT calculations demonstrate that a p-type Ohmic contact between Nb2 CTx and Bi. Nb2 CTx @Bi-based flexible photodetector shows self-powered photodetection capability. The photodetector exhibits enhanced long-term stability.