Zn/Mg co-alloyed for higher photoelectric performance and unchanged spectral response in β-Ga2O3 solar-blind photodetector. (20th October 2021)

• Record Type: Journal Article
• Authors: Chang, Mengmeng; Ye, Junhao; Su, Yuanli; Shen, Jingqin; Zhao, Nie; Wang, Jinbin; Song, Hongjia; Zhong, Xiangli; Wang, Shunli; Tang, Weihua; Guo, Daoyou
• Is Part Of: Journal of physics. Volume 55:Number 3(2022)
• Publication Date: 2021-10-20
• Subjects: gallium oxide -- solar blind -- photodetector -- Zn/Mg Co-alloy -- optoelectrical properties; Physics -- Periodicals; 530
• DOI: 10.1088/1361-6463/ac2db7
• Languages: English
• ISSNs: 0022-3727

Abstract

Abstract: Alloying with the divalent elements (such as Zn and Mg) in β -Ga2 O3 thin film can reduce the dark current and improve the photorespond speed for the solar-blind ultraviolet (UV) photodetector. However, alloying only with one element will change the spectral sensitivity out of solar-blind area due to an increase of band gap for the Mg alloyed and a decrease for Zn alloyed. Herein, a unchange band gap in β -Ga2 O3 thin films were obtained by Zn/Mg co-alloyed through radio frequency magnetron sputtering. The photodetector based on Zn/Mg co-alloyed β -Ga2 O3 thin films shows a low dark current (6.2 × 10 −12 A at 1 V), a high ratio of photo-to-dark current (1.8 × 10 4 ), a high responsivity of 25.7 mA W −1 (to 254 nm), a high rejection ratio ( R 254 nm / R 280 nm ) of 1.2 × 10 3 under the bias of 10 V, and a fast photoresponse time (less than 0.5 μ s for the rise time), which can be practically used to detect weak solar-blind deep UV signals.