Cite
HARVARD Citation
Jin, R. et al. (2022). Photoinduced-reset and multilevel storage transistor memories based on antimony-doped tin oxide nanoparticles floating gate. Nanotechnology. p. . [Online].
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Jin, R. et al. (2022). Photoinduced-reset and multilevel storage transistor memories based on antimony-doped tin oxide nanoparticles floating gate. Nanotechnology. p. . [Online].