Electrical characterization of InGaAs/InAlAs/InP HEMT with multi-finger gate. (December 2021)

• Record Type: Journal Article
• Authors: He, Lijun; Zhao, Boyang; He, Chengyun; Xie, Zhiyang; Zhang, Jinsha; Chen, Weizhong
• Is Part Of: Microelectronics journal. Volume 118(2021)
• Publication Date: 2021-12
• Subjects: InGaAs/InAlAs/InP -- HEMT -- 2DEG -- THz -- Silvaco; Microelectronics -- Periodicals; Microélectronique -- Périodiques; Microelectronics; Electronic journals; Journals - contents and abstracts; Periodicals; 621.3805
• DOI: 10.1016/j.mejo.2021.105261
• Languages: English
• ISSNs: 0959-8324

Abstract

Abstract: InGaAs/InAlAs/InP high electron mobility transistor (HEMT) affords superb high-frequency operation. In this paper, the DC and RF characteristics of a novel InGaAs/InAlAs/InP HEMT with a multi-finger gate has been simulated using Silvaco Atlas at room temperature. The important feature of the device such as threshold voltage, drain current output characteristics, transconductance, cut-off frequency, and maximum oscillation frequency. The simulation results exhibit that characteristics can be well-improved, by using the multi-finger gate. Simulation results show a threshold voltage of −0.9 V, a crest of transconductance of 488 ms/mm, and the cut-off frequency and the maximum oscillation frequency are 853 GHz and 1.4 THz, respectively. These consequences permit us to verify that the device is intended for high-frequency applications.