Current collapse degradation in GaN High Electron Mobility Transistor by virtual gate. (December 2021)

• Record Type: Journal Article
• Authors: Godfrey, D.; Nirmal, D.; Arivazhagan, L.; Godwinraj, D.; Mohan Kumar, N.; Chen, Yulin; Yeh, Wenkuan
• Is Part Of: Microelectronics journal. Volume 118(2021)
• Publication Date: 2021-12
• Subjects: Virtual gate -- GaN -- HEMT -- Surface traps; Microelectronics -- Periodicals; Microélectronique -- Périodiques; Microelectronics; Electronic journals; Journals - contents and abstracts; Periodicals; 621.3805
• DOI: 10.1016/j.mejo.2021.105293
• Languages: English
• ISSNs: 0959-8324

Abstract

Abstract: A Virtual Gate model with surface traps at gate edge of drain side is modelled for AlGaN/GaN High Electron Mobility Transistor (HEMT). This model confirms the utility of a Field Plate (FP) enhances sheet carrier density and suppress current collapse. At the gate-edge of drain side, the channel electron density with Field Plate are 2.1 × 10 9 cm −3, 4.68 × 10 9 cm −3 and 8.63 × 10 9 cm −3 for LFP = 0.5 μm, LFP = 1 μm and LFP = 1.5 μm is increased with respect to Length of Field Plate, whereas without the Field Plate shows much lower electron density value of 1.14 × 10 9 cm −3 in the device. The increase of Drain current (Ids ) from 736 mA/mm to 813 mA/mm with the increase in LFP from 0 μm to 1.5 μm is observed for Drain voltage (Vds ) at 40 V. Furthermore, Field Plate shows a great control over electric field and trapped carrier density at gate edge of the device. The formulated model in this paper is correlated-well with the simulation result of AlGaN/GaN HEMT.