Cite
HARVARD Citation
Fu, H. et al. (2021). Selective area regrowth and doping for vertical gallium nitride power devices: Materials challenges and recent progress. Materials today. pp. 296-323. [Online].
This is an interim version of our Electronic Legal Deposit Catalogue-eJournals and eBooks while we continue to recover from a cyber-attack.
Fu, H. et al. (2021). Selective area regrowth and doping for vertical gallium nitride power devices: Materials challenges and recent progress. Materials today. pp. 296-323. [Online].