Cite
HARVARD Citation
Chiocchetta, F. et al. (2021). Charge trapping in 0.1 μm AlGaN/GaN RF HEMTs: Dependence on barrier properties, voltage and temperature. Microelectronics and reliability. p. . [Online].
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Chiocchetta, F. et al. (2021). Charge trapping in 0.1 μm AlGaN/GaN RF HEMTs: Dependence on barrier properties, voltage and temperature. Microelectronics and reliability. p. . [Online].