Hydrogen‐Related Defects in Insulators. Issue 23 (8th July 2021)

• Record Type: Journal Article
• Authors: Kolkovsky, Vladimir
• Other Names: Brehm Moritz guestEditor.; Springholz Gunther guestEditor.
• Is Part Of: Physica status solidi. Volume 218:Issue 23(2021)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2021-07-08
• Subjects: Al2O3 -- capacitance−voltage -- H plasma -- HfO2 -- hydrogen-related defects -- insulators -- SiO2; Solid state physics -- Periodicals; Solids -- Industrial applications -- Periodicals; 530.41
• DOI: 10.1002/pssa.202100213
• Languages: English
• ISSNs: 1862-6300

Abstract

Abstract : It is shown that the introduction of hydrogen by a dc H plasma treatment leads to the appearance of negatively charged defects in amorphous Al2 O3 and SiO2 and positively charged defects in amorphous HfO2 . The concentration of the defects increases with increasing temperature of the dc H plasma treatment between 50 and 100 °C, and the defects appear in all samples independently on their growth conditions and the thickness of the insulators. The origin of the defects is discussed with an emphasis on the existence of interstitial hydrogen in the insulators. Abstract : Negatively charged defects are observed in metal−oxide−semiconductors (MOS) with amorphous Al2 O3 or SiO2 after a dc H plasma treatment, whereas positively charged defects are detected in hydrogenated MOS with amorphous HfO2 . These defects appear in the oxides independent on their growth conditions. The origin of the defects is discussed with an emphasis on the existence of interstitial hydrogen in insulators.